Stacked RF power amplifier

ABSTRACT

A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.

FIELD OF THE INVENTION

This invention relates to power amplifiers. In particular, thisinvention is drawn to stacked RF power amplifiers.

BACKGROUND OF THE INVENTION

In some applications of power amplifiers, it is desired to provide afixed envelope. For example, some cellular standards, such as GSM/DCS,require a fixed envelope. FIG. 1 shows a typical prior artimplementation of a class E power amplifier design, which provides anoutput having a fixed envelope. FIG. 1 shows a power amplifier 10, whichamplifies an RF input signal (RF IN) to provide an output signal to anantenna 16. The power amplifier 10 includes a predriver circuit 12connected between the input signal RF IN and a switching device Q1,which operates essentially as a switch. The switching device Q1 isconnected to inductor L1, capacitor C1, and transformation network 14. Avoltage source V_(BAT) is provided by a battery. To achieve highefficiency, the transformation network 14, inductor L1, and capacitor C1are tuned to provide the waveform (at node V_(D)) shown in FIG. 2. FIG.2 is plot of the voltage at node V_(D) versus time. In FIG. 2, the peakvoltage of the waveform shown will be approximately 3 to 4 times thesupply voltage V_(BAT).

Currently, typical cellular phone batteries provide a voltage in therange of 3.0 to 3.5 volts, which is based on the voltage of a Li-Ioncell or 3 Ni-Cad cells. At a supply voltage V_(BAT) of 3.5 volts, thepeak voltage in a class E power amplifier (e.g., the voltage at nodeV_(D) in FIG. 1) will be approximately 10.5 to 14.0 volts. Therequirement for a high voltage and a high cut-off frequency f_(T) meansthat exotic technology devices, such as GaAs bipolars, FETs, LDMOS FETs,or SiGe bipolars could be used to meet these requirements. Therequirements mentioned above, pose a large problem when attempting tointegrate a power amplifier in CMOS, since CMOS transistors capable ofrunning at GHz frequencies have maximum peak voltages of less than 5volts.

SUMMARY OF THE INVENTION

An RF power amplifier according to one illustrative embodiment of theinvention includes two power amplifiers fabricated in an integratedcircuit. In this example, the power amplifiers are connected in astacked arrangement. The power amplifiers each include a switchingdevice which is electrically isolated from the other.

Another illustrative embodiment of the invention provides a method ofmaking a stacked RF power amplifier. The stacked RF power amplifier ismade on a CMOS integrated circuit while electrically isolating aswitching device of the first power amplifier with a switching device ofthe second power amplifier. In one example, the switching devices areisolated using a deep N-well.

Other objects, features, and advantages of the present invention will beapparent from the accompanying drawings and from the detaileddescription that follows below.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and notlimitation in the figures of the accompanying drawings, in which likereferences indicate similar elements and in which:

FIG. 1 shows a prior art class E power amplifier.

FIG. 2 is plot of the voltage at node V_(D) of FIG. 1 versus time.

FIG. 3 is a diagram of a non-integrated stacked class E power amplifier.

FIG. 4 is a diagram of an integrated stacked class E RF power amplifier.

FIG. 5 is a diagram illustrating two isolated switching devices of thepresent invention formed on an IC.

FIG. 6 is a diagram of an integrated stacked power amplifier built usingthe switching devices M1 and M2 shown in FIG. 5.

FIGS. 7-10 illustrate several examples of power amplifier designs usingthe isolation techniques of the present invention.

FIGS. 11-12 illustrate another embodiment of the present invention,where an integrated circuit is built using N⁻ starting material.

DETAILED DESCRIPTION

In order to provide a context for understanding this description, thefollowing description illustrates one example of a typical applicationof the present invention. A power amplifier using isolation techniquesof the present invention may be used for any desired applications,including a wireless transmission system such as a mobile or cellularcommunication devices or other wireless device. In a wireless device,the wireless device may include a transceiver, an antenna duplexer, andan antenna. Connected between the transceiver and the antenna duplexeris an RF power amplifier for amplifying signals for transmission via theantenna. In the case of a wireless telephone application, the inventionmay be applied to GSM, CDMA, PCS, DCS, etc., or any other wirelesssystems. This is just one example of an application of a power amplifierutilizing the present invention. The invention may also be used in anyother application requiring a power amplifier.

In general, the present invention provides techniques for electricallyisolating switching devices in a stacked RF power amplifier, whichprevents the switching devices from being subjected to high breakdownvoltages. In one example, one or more switching devices are formed in adeep N-well, which isolates the switching devices from switching devicesoutside the deep N-well. Following is a detailed description of examplesof the present invention.

FIG. 3 is a diagram of a non-integrated stacked class E power amplifierwhich may be used for very high power base-station applications, forexample. FIG. 3 shows a power amplifier 10 which amplifies an RF inputsignal (RF IN) to provide an output signal to an antenna 16. The poweramplifier 10 includes a predriver circuit 12 connected between RF IN anda first transformer T1, which is also connected to a second transformerT2. Each transformer T1 and T2 is connected to one of the parallelamplifiers of the stacked power amplifier 10. Transformer T2 isconnected to switching device Q1 and transformer T3. Transformer T1 isconnected to switching device Q2 and transformer T4. The transformers(or baluns) are used for the input and output coupling since the sizeand cost of this power amplifier are not dominant concerns for very highpower applications. These types of applications could operate with veryhigh supply voltages (e.g., 20-50 volts) and a plurality of stackedparallel power amplifiers, which limit the amount of voltage to whicheach individual transistor is subjected. However, the technique shown inFIG. 3 may not work in an integrated CMOS power amplifier since theintegrated circuit will have a common substrate, which is connected toground. This problem is discussed in more detail below.

As mentioned above, if non-integrated stacked class E power amplifiers(e.g., FIG. 3) are integrated into a CMOS semiconductor device, theswitching devices in the resulting power amplifier would have breakdownvoltage issues. FIG. 4 is a diagram of an integrated stacked class E RFpower amplifier used to illustrate problems encountered with integratingstacked power amplifiers into an integrated circuit. FIG. 4 shows adifferential class E power amplifier 10 having two parallel amplifiers,each with a switching device M1, M2 and an inductor L1, L2. For clarity,FIG. 4 omits any pre-driver circuitry. The inputs to the power amplifier10 can be in or out of phase, depending on how the power combining andtransformation network 14 is implemented. The differential outputsV_(D1) and V_(D2) are connected to a power combining and transformationnetwork 14, which is connected to an antenna 16. In the example shown inFIG. 4, with a battery voltage (V_(BAT)) of 3.5 volts, the voltage atnode 18 will be approximately half of V_(BAT), or 1.75 volts. The peakvoltage at node V_(D2) will be less than 5.2 volts, which would allowthe circuit of FIG. 4 to be implemented in CMOS. However, one problemwith the example shown in FIG. 4 is that the peak voltage at node V_(D1)may rise to approximately 7 volts, which will create breakdown issueswith either the drain-substrate or gate-substrate of the switchingdevice M2. As illustrated by connection 20 of FIG. 4, if the circuit ofFIG. 4 is formed on an integrated circuit, the transistor bodies of theswitching devices M1 and M2 are not isolated from one other.

As mentioned above, the present invention addresses the problemsdiscussed above by electrically isolating two or more switching devicesin a stacked power amplifier. In recent generations of CMOS and othertechnologies, a “deep N-well”, or “triple well”, is available.Generally, when using a deep N-well, three wells are present: an N-well,a P-well, and a deep N-well. Deep N-wells were developed to help with RFisolation issues, but are used in the present invention to permit theintegration of a stacked CMOS power amplifier. FIG. 5 is a diagramillustrating two isolated switching devices of the present inventionformed on an integrated circuit (IC). In FIG. 5, a deep N-well 26 isformed in the P⁻ substrate 24. A P-well 28 is formed within the deepN-well 26. FIG. 5 shows two NMOS switching devices M1 and M2 formed onIC 22. Switching device M1 is built in the P⁻ substrate 24, so that theP⁻ substrate 24 of the IC 22 serves as the transistor body of switchingdevice M1. Switching device M2 is built within the deep N-well 26, whichisolates the P⁻ substrate 24 from the P-well, or P⁻ substrate 28. Sincethe switching device M2 is formed in the deep N-well 26, the transistorbody of switching device M2 (P⁻ substrate 28) is electrically isolatedfrom the transistor body of switching device M1 (P⁻ substrate 26). FIG.5 also shows a deep N-well bias (NW BIAS) that can be connected to thesource of switching device M2 or to V_(BAT), for example.

Note that other techniques may also be used to isolate switching devicesM1 and M2. In addition to deep wells, the isolation can be provided byany other substrate isolation technology or any technique thatelectrically separates the transistor bodies of the switching devices.In another example, P wells can be formed using a semiconductor that ismanufactured using N⁻ starting material, rather than P⁻ startingmaterial (described in detail below). In another example, isolation isprovided using silicon on insulator (SOI) technology (a semiconductorfabrication technique that uses crystal silicon and silicon oxide forICs). Also, additional isolation can be provided. For example, a seconddeep N-well may be used so that both switching devices are isolated fromthe main substrate. Also, for power amplifiers having more stackedamplifiers, any desired number of switching devices can be isolated.

FIG. 6 is a diagram of an integrated stacked class E power amplifierbuilt using the switching devices M1 and M2 shown in FIG. 5. FIG. 6shows a power amplifier that is similar to the power amplifier shown inFIG. 4, except that the switching devices M1 and M2 are electricallyisolated from each other using the deep N-well, as discussed above.Since switching devices M1 and M2 are isolated, there are no breakdownvoltage issues.

FIGS. 7-10 illustrate several examples of power amplifier designs usingthe isolation techniques of the present invention. FIGS. 7 and 8illustrate examples of singled ended power amplifier designs. FIGS. 9and 10 illustrate examples of differential power amplifier designs.

FIG. 7 shows a power amplifier 10 similar to the power amplifier shownin FIG. 6, but also illustrates an exemplary power combining andtransformation network and input network. The power amplifier 10 of FIG.7 includes two stacked power amplifiers, with each amplifier having aswitching device M1, M2 and inductor L1, L2. The RF input signal RF INis provided to predriver circuit 12, which has two outputs that are 180degrees out of phase with each other. A pre-amplifier, comprised ofswitching devices M3, M4 and inductors L3 and L4, is coupled between thestacked power amplifiers and the predriver circuit 12. One of theoutputs of the predriver circuit 12 is coupled to the gate of switchingdevice M3. The other output of the predriver circuit 12 is coupled tothe gate of switching device M4 via capacitor C4 and resistor R1. Theoutput nodes V_(D1) and V_(D2) are coupled to the antenna 16 via thepower combining and transformation network 14. The power combining andtransformation network 14 includes inductors L5 and L6 and capacitors C5and C8. FIG. 7 also shows a series voltage regulator, comprised ofswitching device M5 coupled to the voltage source V_(BAT).

FIG. 8 shows a second example of a single ended power amplifier designof the present invention. The power amplifier shown in FIG. 8 is similarto the power amplifier shown in FIG. 7 with a transformer coupled outputnetwork. In FIG. 8, inductors L1 and L2 are replaced with transformersT6 and T5. The secondary sides of transformers T6 and T5 are coupled tothe antenna 16 via a transformation network 14 comprised of inductor L7and capacitors C11 and C12.

FIG. 9 shows an example of a differential power amplifier of the presentinvention. In FIG. 9, a first power amplifier 10 and a second poweramplifier 10′ are connected differentially as shown. The poweramplifiers 10 and 10′ of FIG. 9 are the identical to each other,although they are driven by RF input signals that are 180 degrees out ofphase with each other. Each power amplifier 10 and 10′ is the same asthe power amplifiers shown in FIGS. 7 and 8, except for the outputnetworks. The output nodes V_(D1) and V_(D2) of the power amplifier 10are connected to inductors L8 and L9. The output nodes V_(D1)′ andV_(D2)′ of the power amplifier 10′ are connected to capacitors C15 andC16. The inductors L8 and L9 and capacitors C15 and C16 are coupled tothe antenna 16 via capacitors C17 and C18 and inductor L10.

FIG. 10 shows a second example of a differential power amplifier designof the present invention. In FIG. 10, a first power amplifier 10 and asecond power amplifier 10′ are connected differentially as shown. Thepower amplifiers 10 and 10′ are the same as those shown in FIG. 9,except for the output network. Also, for clarity, the predrivers andpre-amplifiers are not shown in FIG. 10. In FIG. 10, the output nodesV_(D1) and V_(D2) of the power amplifier 10 are connected to capacitorC22 and inductor L11. The output nodes V_(D1)′ and V_(D2)′ of the poweramplifier 10′ are connected to inductor L12 and capacitor C21. Theinductors L11 and L12 and capacitors C21 and C22 are coupled to theantenna 16 via capacitors C19 and C20 and inductor L13. Note that thepower amplifiers shown in FIGS. 9-10 could also use other outputtransformation networks, in addition to the examples shown in thefigures.

FIGS. 11-12 illustrate another embodiment of the present invention,where an integrated circuit is built using N⁻ starting material. FIG. 11shows a stacked power amplifier 10 similar to the amplifiers discussedabove. The power amplifier 10 has a first amplifier comprised ofswitching device M1 and inductor L1, and a second amplifier comprised ofswitching device M2 and inductor L2. FIG. 12 is a diagram illustratingthe implementation of the power amplifier of FIG. 11 in an IC 30. The IC30 is built using N⁻ starting material, rather than theindustry-standard P⁻ starting material (e.g., FIG. 5). In this example,the switching devices M1 and M2 are NMOS transistors, and are formedwithin two P-wells 32 and 34 of the IC 30. The N⁻ started IC 30 allowsthe transistors to be isolated from one another, which permits theconstruction of the stacked power amplifier designs discussed above.

In the preceding detailed description, the invention is described withreference to specific exemplary embodiments thereof. Variousmodifications and changes may be made thereto without departing from thebroader spirit and scope of the invention as set forth in the claims.The specification and drawings are, accordingly, to be regarded in anillustrative rather than a restrictive sense.

1. An RF power amplifier comprising: an integrated circuit; a firstpower amplifier formed on the integrated circuit, the first poweramplifier having a first switching device; a second power amplifierformed on the integrated circuit, the second power amplifier having asecond switching device, wherein the first and second power amplifiersare connected in a stacked arrangement between a voltage supply andground; and wherein the first and second switching devices areelectrically isolated from each other.
 2. The RF power amplifier ofclaim 1, wherein the first and second switching devices are electricallyisolated by isolating the bodies of the first and second switchingdevices.
 3. The RF power amplifier of claim 2, wherein the bodies of thefirst and second switching devices are isolated by forming one of theswitching devices in a deep N-well.
 4. The RF power amplifier of claim3, wherein a bias voltage is applied to the deep N-well.
 5. The RF poweramplifier of claim 1, wherein the first and second switching devices areisolated by forming the integrated circuit using N⁻ starting material.6. The RF power amplifier of claim 2, wherein the bodies of the firstand second switching devices are isolated using silicon on isolatortechnology.
 7. The RF power amplifier of claim 1, further comprising athird power amplifier formed on the integrated circuit, the third poweramplifier having a third switching device, wherein the first, second andthird switching devices are electrically isolated from each other. 8.The RF power amplifier of claim 1, wherein the integrated circuit isimplemented using CMOS technology.
 9. A method of making a stacked RFpower amplifier comprising: providing a CMOS integrated circuit; formingfirst and second stacked power amplifiers on the CMOS integratedcircuit, wherein the first and second stacked power amplifiers eachinclude at least one switching device; and electrically isolating aswitching device of the first power amplifier with a switching device ofthe second power amplifier.
 10. The method of claim 9, wherein the stepof electrically isolating a switching device of the first poweramplifier with a switching device of the second power amplifier furthercomprises isolating the body of the first switching device from the bodyof the second switching device.
 11. The method of claim 10, furthercomprising forming a deep N-well in the integrated circuit.
 12. Themethod of claim 11, wherein the switching device of the second poweramplifier is formed using the deep N-well to provide isolation from theswitching device of the first power amplifier.
 13. The method of claim12, further comprising applying a bias voltage to the deep N-well. 14.The method of claim 10, further comprising using silicon on isolatortechniques for isolating the body of the first switching device from thebody of the second switching device
 15. A stacked RF power amplifiercomprising: an integrated circuit; first and second stacked poweramplifiers, wherein each power amplifier includes at least one switchingdevice having a substrate; and wherein the body of a switching device inthe first power amplifier is electrically isolated from the body of aswitching device in the second power amplifier.
 16. The stacked RF poweramplifier of claim 15, wherein the isolation is provided by forming oneof the switching devices in a deep N-well.
 17. The stacked RF poweramplifier of claim 16, wherein a bias voltage is applied to the deepN-well.
 18. The stacked RF power amplifier of claim 15, wherein theisolation is provided by forming the integrated circuit using N⁻starting material and forming the switching devices in P-wells.
 19. Thestacked RF power amplifier of claim 15, wherein the isolation isprovided by using a silicon on isolator technique.
 20. The stacked RFpower amplifier of claim 15, wherein the integrated circuit isimplemented using CMOS technology.
 21. A stacked RF power amplifierformed on an integrated circuit comprising: a first transistor formed onthe integrated circuit, the first transistor having a transistor body; asecond transistor formed on the integrated circuit, the first transistorhaving a transistor body; and wherein the transistor body of the firsttransistor is isolated from the transistor body of the secondtransistor.
 22. The stacked RF power amplifier of claim 21, wherein thetransistor bodies of the first and second transistors are isolated byforming one of the transistors in a deep N-well.
 23. The stacked RFpower amplifier of claim 21, further comprising the steps of: formingthe integrated circuit using N⁻ starting materials; and forming thefirst and second transistors in P-wells in the integrated circuit. 24.The stacked RF power amplifier of claim 21, wherein the transistorbodies of the first and second transistors are isolated using silicon onisolator technology.
 25. The stacked RF power amplifier of claim 21,wherein the integrated circuit is implemented using CMOS technology.